Maximum flexibility and capability. The Beneq Transform® 300 is the only 300mm ALD cluster tool offering both Thermal ALD (batch) and Plasma ALD (single wafer) technologies.
Find the right set up for you. The Transform® 300 platform is designed to meet a wide range of capacity and applications requirements including advanced packaging, chip scale package and wafer-on-tape applications.
The top tier of industry standards. This tool includes best-in-class serviceability and the shortest MTTCR available. With our proprietary pre-heating module, enjoy some of the highest throughput for thermal batch ALD.
Beneq Transform® 300 is cleanroom compatible with SECS/GEM communication capabilities and is compliant with the highest SEMI S2 and S8 standards.
Equipment :
Maximum Configuration | 3 processing modules & 1 preheater |
Preheating capability | Yes |
Transfer module | M2C5 |
Cooling option | Built-in |
Substrate loading | EFEM |
Substrate size | 300mm with 200mm bridge capability |
Substrate | Si, Glass, and Others |
Dimensions | 4400 x 4800 x 2250 mm |
Host Integration | SECS/GEM |
Throughput :
Al2O3–300°C–50nm | 12 wafers/hour – 1 PM |
ALD Batch Process Module :
Batch size | Up to 25 x 300 mm wafers |
Safety standards | SEMI S2 and S8 |
ALD processes | Al2O3, HfO2, Ta2O5, TiO2, SiO2, ZnO, AlN, TiN |
Processing temperature | Up to 420 °C |
Liquid source lines | 3+1 (optional) |
Ammonia gas line | Optional |
Ozone gas line | Optional |
Process control | Recipe-based; fully configurable |
ALD Plasma Process Module :
Single wafer | 300mm with 200mm bridge capability |
Safety standards | SEMI S2 and S8 |
ALD processes | AlN, Si3N4, SiO2, Al2O3 |
Processing temperature | Up to 350 °C |
Liquid source lines | 3+1 (optional) |
Plasma gas lines | N2, O2, H2(optional) |
Plasma pretreatment | Yes |
Ammonia gas line | Optional |
Ozone gas line | Optional |
Process control | Recipe-based; fully configurable |
BENEQ Transform® 300 Brochure (pdf / English)