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Beneq | Transform® 300
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Beneq Transform® 300

The most versatile ALD cluster tool for 300 mm wafer production
Beneq Transform 300 is a highly versatile manufacturing platform intended for IDMs and foundries dedicated to CIS, Power, Micro-OLED/LED, Advanced Packaging and other MtM applications. It is a highly configurable solution that caters to multiple advanced thin-film applications ranging from gate dielectric to passivation and/or encapsulation and beyond.

Beneq | Transform® 300


Versatility

Maximum flexibility and capability. The Beneq Transform® 300 is the only 300mm ALD cluster tool offering both Thermal ALD (batch) and Plasma ALD (single wafer) technologies.

Configurable

Find the right set up for you. The Transform® 300 platform is designed to meet a wide range of capacity and applications requirements including advanced packaging, chip scale package and wafer-on-tape applications.


Productivity

The top tier of industry standards. This tool includes best-in-class serviceability and the shortest MTTCR available. With our proprietary pre-heating module, enjoy some of the highest throughput for thermal batch ALD.

FAB-Ready

Beneq Transform® 300 is cleanroom compatible with SECS/GEM communication capabilities and is compliant with the highest SEMI S2 and S8 standards.


Technical Specifications Transform ® 300

Equipment :

Maximum Configuration
3 processing modules & 1 preheater
Preheating capability
Yes
Transfer module
M2C5
Cooling option
Built-in
Substrate loading
EFEM
Substrate size
300mm with 200mm bridge capability
Substrate
Si, Glass, and Others
Dimensions
4400 x 4800 x 2250 mm
Host Integration
SECS/GEM


Throughput :

Al2O3–300°C–50nm 12 wafers/hour – 1 PM

ALD Batch Process Module :

Batch size
Up to 25 x 300 mm wafers
Safety standards
SEMI S2 and S8
ALD processes
Al2O3, HfO2, Ta2O5, TiO2, SiO2, ZnO, AlN, TiN
Processing temperature
Up to 420 °C
Liquid source lines
3+1 (optional)
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable

ALD Plasma Process Module :

Single wafer
300mm with 200mm bridge capability
Safety standards
SEMI S2 and S8
ALD processes
AlN, Si3N4, SiO2, Al2O3
Processing temperature
Up to 350 °C
Liquid source lines
3+1 (optional)
Plasma gas lines
N2, O2, H2(optional)
Plasma pretreatment
Yes
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable


Technical Specifications :
Product Transform ® 300
Dimensions 4400 x 4800 x 2250 mm
Max Batch Load 300 mm x 25 wafers
VCE Loadlocks EFEM
Integration SECS/GEM
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling Built-in
Temperature Range 25 – 420 ℃
Plasma Gas Lines 3+1 optional
Transfer Module Type M2C5
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 12 wafers/hour – 1 PM
Wafer Throughput (HfO2 @ 250 C, 20 nm) N/A
Integration SECS/GEM
Safety and Ergonomics SEMI S2 and S8


Brochures & Datasheets :

   BENEQ Transform® 300 Brochure (pdf / English)


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