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Beneq | Transform®
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Beneq Transform®

Versatile, automated ALD solution for high-throughput semiconductor production

One platform, multiple configurations.

Beneq Transform® establishes a completely new class of ALD cluster tool products in it’s versatility and adaptability to address a broad range of applications and market segments. Beneq Transform® configure with multiple ALD process modules to meet a specific wafer capacity requirement or be later upgraded in response to growing volumes or with new ALD applications.

Beneq | Transform®

Thermal and Plasma ALD in one

Single wafer or batch processing. Widest range of high-performance oxides and nitrides. Maximize your options for flexible volume production. With its flexible automation platform and unique capability to combine both thermal batch and plasma enhanced ALD process modules in one integrated system, Beneq Transform® offers unparalleled flexibility in how processing sequences can be realized to meet the most demanding thin-film deposition requirements.


Designed for the fab

Industry-standard horizontal wafer loading offers plug-and-play integration. A unique preheating module eliminates waiting time and boosts throughput to a whole new level.


SEMI certified

Fully compliant with SEMI S2/S8 and SECS/GEM standards. Customized support ensures a smooth transition to ALD in production.


Applications Examples :
  • Surface passivation of GaN HEMTs
  • Gate oxide for SiC MOSFETs, GaN MISFETs, and vertical GaN devices
  • Surface passivation and etch hardmask for MEMS devices, including RF filters
  • Final passivation of RF and power devices
  • Surface passivation of MicroLEDs and photonics devices
  • Isolation, barrier, and seed layers for TSVs


Technical Specifications :

Product Transform®
Dimensions 3000 x 3000 x 2250 mm
Max Batch Load 200 mm x 25 wafers
VCE Loadlocks 2
Integration Cluster, up to 3 ALD modules & 1 pre-heater
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling Built-in
Temperature Range 25 – 420 ℃
Plasma Gas Lines 2 + 2 optional
Transfer Module Type Mx600
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 40 wafers/hour – 3 PM
Wafer Throughput (HfO2 @ 250 C, 20 nm) 28 wafers/hour – 3 PM
Integration SECS/GEM
Safety and Ergonomics SEMI S2 and S8


  Beneq Transform® Beneq Transform® Lite
Wafer size up to 200 mm up to 200 mm
Max batch Load 25 wafers 25 wafers
Process modules Up to 3 ALD modules + 1 preheating module Up to 2 ALD modules + 1 preheating module
Wafer Cooling Built-in Facet-mounted
Temperature Range Plasma ALD up to 370 °C; thermal batch up to 420 °C Plasma ALD up to 370 °C; thermal batch up to 420 °C
Plasma Gas Lines 2 standard, 2 optional 2 standard, 2 optional
Liquid source lines 4 4
Transfer Module 2 load locks, 4 facets 1 load lock, 3 facets
Host integration SECS/GEM, optional 300 mm extension, optional EDA SECS/GEM, optional 300 mm extension, optional EDA

Brochures & Datasheets :

   BENEQ Transform and Transform Lite Brochure (pdf / English)


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